Handbook of crystal growth : Thin films and epitaxy / Basic techniques / D. T. J. Hurle
Material type: TextLanguage: English Publisher: Netherlands : North Holland, 1994Description: 456 pISBN: 0444815562Subject(s): Crecimiento de cristalesDDC classification: 548.5Item type | Current location | Collection | Call number | Vol info | Copy number | Status | Date due | Barcode |
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Libro OptoElectrónica | Laboratorio de Optoelectrónica RESERVA | Papel | 548.5 H965 (Browse shelf) | Vol. 3 | Ej. 1 | Available | L000734 |
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548.5 B993 Crystal growth technology / | 548.5 G539 Growth of crystals / | 548.5 H965 Handbook of crystal growth : | 548.5 H965 Handbook of crystal growth : | 548.5 M992 The atomistic nature of crystal growth / | 548.8 R685 Estados de la materia / | 548.8 R696 Fundamentos de cristalografia física / |
Vol. Parte A. Basic Techniques
1. Kinetic processes in vapour growth 2. Organometallic vapor phase epitaxy reaction kinetis 3. Transport phenomena in vapor phase epitaxy reactors 4. Atomic layer epitaxy 5. Nucleation and surface diffusion in molecular beam epitaxy 6.Migration-enhaced epitaxy 7. etalorganic vapour phase epitaxial growth of ultra-thin quiantum wells and heterostructures 8. Photoassisted epitaxy 9. In situ optical studies of epitaxial growth 10. Atomic mechanisms in semiconductor liquid phase epitaxy 11. Artificial epitaxy 12. Structural effects in coherent epitaxial semiconductor films
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